Apparatuses and methods including memory access in cross point memory

ABSTRACT

Some embodiments include apparatuses and methods having a memory cell, first and second conductive lines configured to access the memory cell, and a switch configured to apply a signal to one of the first and second conductive lines. In at least one of such embodiments, the switch can include a phase change material. Other embodiments including additional apparatuses and methods are described.

PRIORITY

This application is a Divisional of U.S. application Ser. No.15/905,317, filed Feb. 26, 2018, which is a Divisional of U.S.application Ser. No. 15/676,560, filed Aug. 14, 2017, now issued as U.S.Pat. No. 9,905,296, which is a Divisional of U.S. application Ser. No.15/437,141, filed Feb. 20, 2017, now issued as U.S. Pat. No. 9,734,907,which is a Divisional of U.S. application Ser. No. 15/180,909, filedJun. 13, 2016, now issued as U.S. Pat. No. 9,576,659, which is aDivisional of U.S. application Ser. No. 14/973,446, filed Dec. 17, 2015,now issued as U.S. Pat. No. 9,368,554, which is a Divisional of U.S.application Ser. No. 13/465,579, filed May 7, 2015, now issued as U.S.Pat. No. 9,245,926, all of which are incorporated herein by reference intheir entirety.

BACKGROUND

Computers and other electronic products, for example, digitaltelevisions, digital cameras, and cellular phones, often have one ormore memory devices to store information. Such memory devices usuallyhave numerous memory cells and associated circuitry to access the memorycells. As memory cell density increases for a given device size,producing these types of memory devices may pose challenges.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a block diagram of an apparatus in the form of a memorydevice, according to an embodiment of the invention.

FIG. 2A shows a schematic diagram of a portion of a memory device havinga memory array, according to an embodiment of the invention.

FIG. 2B is a graph showing an example of a current versus voltage (IV)curve of an access component in a memory cell of the memory device ofFIG. 2A.

FIG. 3 shows a schematic diagram of a portion of a memory deviceincluding a column switching circuit, according to an embodiment of theinvention.

FIG. 4 is an example timing diagram for signals shown in FIG. 3 during amemory operation, according to an embodiment of the invention.

FIG. 5 shows a schematic diagram of a portion of a memory deviceincluding a row switching circuit, according to an embodiment of theinvention.

FIG. 6 is an example timing diagram for signals shown in FIG. 5 during amemory operation, according to an embodiment of the invention.

FIG. 7 shows a schematic diagram of a portion of a memory deviceincluding row and column switching circuits, according to an embodimentof the invention.

FIG. 8 is an example timing diagram for signals shown in FIG. 7 during amemory operation, according to an embodiment of the invention.

FIG. 9 shows a schematic diagram of a portion of a memory deviceincluding multiple memory arrays, according to an embodiment of theinvention.

FIG. 10 shows a schematic diagram of a portion of a memory deviceincluding a select circuit shared by multiple memory arrays, accordingto an embodiment of the invention.

FIG. 11 shows a schematic diagram of a portion of a memory deviceincluding multiple memory arrays and a select circuit having resistors,according to an embodiment of the invention.

FIG. 12 shows a structure of a portion of a memory device, according toan embodiment of the invention.

FIG. 13 shows a structure of a portion of a memory device includingconductive lines having different widths, according to an embodiment ofthe invention.

FIG. 14 shows another structure of a portion of a memory device,according to an embodiment of the invention.

FIG. 15 shows a structure of a portion of a memory device includingmultiple memory arrays arranged in a stack, according to an embodimentof the invention.

FIG. 16 is a flowchart showing a method, according to an embodiment ofthe invention.

DETAILED DESCRIPTION

FIG. 1 shows a block diagram of an apparatus in the form of a memorydevice 100, according to an embodiment of the invention. A memorydevice, such as memory device, can includes any device having somememory capability, such as, but not limited to, stand alone memories,managed memories, processors and/or CPUs and/or logic circuits withembedded memory, sensors and/or other devices using code and/or dataand/or parameter storage.

As shown in FIG. 1, memory device 100 can include a memory array 102having memory cells 103 that can be arranged in rows and columns alongwith lines 104 and lines 105. Memory device 100 can include a rowdecoder 106 and a column decoder 107 coupled to memory cells 103 throughlines 104 and lines 105, respectively.

Row and column decoders 106 and 107 can be configured to respond to anaddress register 112 to access memory cells 103 based on row address andcolumn address signals on lines 110, 111, or both. A data input/outputcircuit 114 can be configured to exchange data between memory cells 103and lines 110. Lines 110 and 111 can include nodes within memory device100 (or alternatively, pins, solder balls, or other interconnecttechnologies such as controlled collapse chip connection (C4) or flipchip attach (FCA)) on a package where the memory device 100 can reside.

A control circuit 116 can control operations of memory device 100 basedon signals present on lines 110 and 111. A device (e.g., a processor ora memory controller, not shown in FIG. 1) external to memory device 100can send different commands (e.g., read, write, or erase command) tomemory device 100 using different combinations of signals on lines 110,111, or both.

Memory device 100 be configured to respond to commands to perform memoryoperations, such as a read operation to read information from memorycells 103 and a write (e.g., programming) operation to store (e.g.,program) information into memory cells 103. Memory device 100 can alsoperform an erase operation to clear information from some or all ofmemory cells 103.

Memory device 100 can receive a supply voltage, including supplyvoltages Vcc and Vss. Supply voltage Vss can operate at a groundpotential (e.g., having a value of approximately zero volts). Supplyvoltage Vcc can include an external voltage supplied to memory device100 from an external power source such as a battery or analternating-current to direct-current (AC-DC) converter circuitry.

Memory device 100 can include a voltage generator 108. Control circuit116 and voltage generator 108 can be configured to generate differentvoltages for use during memory operations of memory device 100. Forexample, voltages generated by voltage generator 108 can be applied(e.g., in the form of signals) to lines 104 and 105 during a read orwrite operation to access memory cells 103. Voltage generator 108 andcontrol circuit 116 (or parts thereof) can be referred to separately ortogether as a module to cause the application of voltages to components(e.g., lines 104 and 105) of memory device 100.

Each of memory cells 103 can be programmed to store informationrepresenting a value for a fraction of a bit, a value of a single bit,or a value of multiple bits such as two, three, four, or another numberof bits. For example, each of memory cells 103 can be programmed tostore information representing a binary value “0” or “1” of a singlebit. The single bit per cell is sometimes called a single level cell. Inanother example, each of memory cells 103 can be programmed to storeinformation representing a value for multiple bits, such as one of fourpossible values “00”, “01”, “10”, and “11” for two bits, or one of eightpossible values “000”, “001”, “010”, “011”, “100”, “101”, “110”, and“111” for three bits, or one of other values for another number ofmultiple bits. A memory cell that has the ability to store multiple bitsis sometimes called a multi-level cell (or multi-state cell).

Memory device 100 can include a non-volatile memory device, and memorycells 103 can include non-volatile memory cells, such that memory cells103 can retain information stored thereon when power (e.g., Vcc, Vss, orboth) is disconnected from memory device 100. For example, memory device100 can be a variable resistance memory device (e.g., a phase changememory (PCM) device or a resistive random access memory (RRAM) device),or another kind of memory device, such as a flash memory device (e.g., aNAND flash or a NOR flash memory device).

In memory device 100, each of memory cells 103 can include a material.At least a portion of the material can be programmed to change betweendifferent states. The different states can have different resistancevalues. Such resistance values can be configured to represent differentvalues of information stored in each of memory cells 103.

Memory device 100 can include a memory device where memory cells 103 canbe physically located in multiple levels on the same device. Forexample, some of memory cells 103 can be stacked over some other memorycells 103 in multiple levels over a substrate (e.g., a semiconductorsubstrate) of memory device 100.

One of ordinary skill in the art may recognize that memory device 100can include other elements. FIG. 1 omits such elements so as not toobscure some example embodiments described herein.

Memory device 100 may include memory devices and operate using memoryoperations similar to or identical to memory devices and operationsdescribed below with reference to FIG. 2A through FIG. 16.

FIG. 2A shows a schematic diagram of a portion of a memory device 200having a memory array 202, according to an example embodiment. Memorydevice 200 can be associated with memory device 100 of FIG. 1. Forexample, memory array 202 of FIG. 2A can form a portion of memory array102 of memory device 100 of FIG. 1.

As shown in FIG. 2A, memory array 202 can include memory cells 203 thatcan be arranged in a number of rows 221, 222, 223 and 224 and a numberof columns 211, 212, 213 and 214. Each of memory cells 203 can becoupled between one of lines 251, 252, 253, and 254 and one of lines271, 272, 273, and 274. FIG. 2A shows an example of four lines 251, 252,253, and 254 and four lines 271, 272, 273, and 274 and associated 16memory cells 203. The number of lines and memory cells can vary.

Lines 251, 252, 253, and 254 and lines 271, 272, 273, and 274 can beconfigured as access lines (e.g., column and row access lines) to accessmemory cells 203. Either lines 251, 252, 253, and 254 or lines 271, 272,273, and 274 can also be configured (e.g., as data lines) to provideinformation read from memory cells or information to be stored intomemory cells 203.

Physically, lines 251, 252, 253, and 254 and lines 271, 272, 273, and274 can be structured as conductive lines where lines 251, 252, 253, and254 can pass over (e.g., cross over and not directly couple to) lines271, 272, 273, and 274 at a number of different cross points. Each ofmemory cells 203 can be located between and coupled to one of lines 251,252, 253, and 254 and one of lines 271, 272, 273, and 274 at one of thecross points. Thus, memory array 202 can be, for example, a cross-pointmemory array. Memory cells 203 can be non-volatile memory cells.

As shown in FIG. 2A, each of memory cells 203 can include an accesscomponent 204 and a storage element 205. Storage element 205 can beconfigured to store information. For example, storage element 205 can beconfigured to store a value representing a value of a fraction of a bit,a single bit, or multiple bits. Access component 204 in each of memorycells 203 can be configured to operate as a switch to access storageelement 205 in the same memory cell.

Storage element 205 can include a material where at least a portion ofthe material can be changed (e.g., in a write operation) betweendifferent states (e.g., different material phases). The different statescan have a range of different resistance values. Different resistancevalues can be configured to represent different values of informationstored in each of memory cells 203.

Access component 204 can include a material where at least a portion ofthe material can be configured to change (e.g., switch) between anon-conductive state and a conductive state. For example, when one ofmemory cells 203 is selected in a memory operation, memory device 200can cause access component 204 of the selected memory cell 203 to turnon (e.g., change from a non-conductive state to a conductive state).This allows access to storage element 205 of the selected memory cell.

A memory operation in memory device 200 can include different stages.The stages can include an access stage followed by either a sense stage(e.g., read stage) or a program stage (e.g., write stage). In the accessstage, memory device 200 can turn on access component 204 of a selectedmemory cell 203 to access storage element 205 of the selected memorycell. If the memory operation is a read operation, memory device 200 canperform an access stage followed by a sense stage to sense informationfrom the selected memory cell. Based on sensed information, memorydevice 200 can determine the value of information stored in the selectedmemory cell. If the memory operation is a write operation, memory device200 can perform an access stage followed by a program stage to storeinformation into the selected memory cell.

Storing information into storage element 205 of a selected memory cell(one of memory cells 203) in a write operation can include causingstorage element 205 of the selected memory cell 203 to have a specificresistance value. The specific resistance value can be configured torepresent the value of information to be stored into the selected memorycell. Thus, sensing information from a selected memory cell (e.g., in aread operation) can include measuring a resistance value of storageelement 205 of the selected memory cell. Measuring the resistance valuecan include determining a value of a signal (e.g., an electrical currentsignal) going through the selected memory cell. Based on a measuredvalue of the signal, a corresponding value of the information stored inthe selected memory cell can be determined.

As described above, in a memory operation, one of memory cells 203 canbe the selected memory cell and accessed to read information from or tostore information into the selected memory cell. In a memory operation,the selected memory cell can be associated with two selected lines(e.g., selected row and column access lines). One selected line can befrom one of lines 251, 252, 253, and 254. The other selected line can befrom one of lines 271, 272, 273, and 274. To access a selected memorycell, memory device 200 can turn on access component 204 of the selectedmemory cell based on a voltage difference between the two selectedlines.

In FIG. 2A, depending on which of memory cells 203 is a selected memorycell in a memory operation, memory device 200 can apply differentvoltages to lines 251, 252, 253, and 254 and lines 271, 272, 273, and274. The different voltages can have different values to turn on accesscomponent 204 of only the selected memory cell. This allows access toonly the selected memory cell. Access component 204 of memory cells 203that are unselected (in other words, not selected) can turn off (e.g.,remain in a non-conductive state). Thus, memory cells 203 that areunselected in the memory operation are not accessed.

In the following example memory operation, memory cell 203 located atthe cross point of row 224 and column 214 is assumed to be a selectedmemory cell. Other memory cells 203 can be referred to as unselectedmemory cells. Two lines that are directly coupled to a selected memorycell can be referred to as selected lines. Thus, in this example, lines254 and lines 274 can be referred to as selected lines. Lines that arenot directly coupled to the selected memory cell can be referred to asunselected lines. Thus, in this example, lines 251, 252, 253, 271, 272,and 273 can be referred to as unselected lines.

In the example memory operation, memory device 200 can apply differentvoltages to lines 254 and 274 (e.g., two selected lines). The voltageson lines 254 and 274 can have values, such that a voltage differencebetween lines 254 and 274 can cause access component 204 of the selectedmemory cell to turn on. This allows access to storage element 205 of theselected memory cell. Memory device 200 can either read information fromor store information into the selected memory cell after it is accessed.Memory device 200 can read information from the selected memory cell ifthe example memory operation is a read operation. Memory device 200 canstore information into the selected memory cell if the example memoryoperation is a write operation.

In the above example memory operation, memory device 200 can also applyvoltages to the unselected lines (lines 251, 252, 253, 271, 272, and273). However, the voltages applied to the unselected lines can havevalues, such that a voltage difference between each of lines 251, 252,and 253 and each of lines 271, 272, and 273 can be insufficient to turnon access component 204 of the unselected memory cells coupled to theunselected lines (e.g., memory cells at intersections of columns 211,212, and 213 and rows 221, 222, and 223). Voltages applied to theunselected lines can have values, such that a voltage difference betweenline 274 and each of lines 251, 252, and 253 and a voltage differencebetween line 254 and each of lines 271, 272, and 273 can be insufficientto turn on access component 204 of the unselected memory cells coupledto the selected lines (e.g., memory cells at intersections of columns211, 212, and 213 and rows 224 and memory cells at intersections of rows221, 222, and 223 and column 214). Thus, unselected memory cells 203 arenot accessed.

Storage element 205 can include a variable resistance material. Forexample, storage element 205 can include a phase change material. Anexample of a phase change material includes a chalcogenide material.Examples of chalcogenide materials include various combinations ofgermanium (Ge), antimony (Sb), tellurium (Te), and other similarmaterials.

A phase change material can be configured to change between acrystalline state (sometimes referred to as crystalline phase) and anamorphous state (sometimes referred to as amorphous phase). The phasechange material can have one resistance value when it is in thecrystalline state and another resistance value when it is in theamorphous state. These different resistance values of the phase changematerial can be configured to represent different values of informationstored in a storage element, such as storage element 205 of memorydevice 200.

Access component 204 can include a variable resistance material (e.g.,phase change material). However, the material of access component 204can be configured such that it can operate only as a switch (e.g., notto store information) to allow access to storage element 205, asdescribed above. For example, access component 204 can include a phasechange material that can be configured to operate as an ovonic thresholdswitch (OTS).

The ovonic threshold switch can have a threshold voltage (e.g., Vt) suchthat the ovonic threshold switch can switch from a non-conductive state(e.g., a highly resistive state) to a conductive state (a lowerresistive state) when a voltage across it exceeds the threshold voltage.An amount of current can flow through the ovonic threshold switch whenit is the conductive state. The amount of current can decrease after atime. When the amount of current reaches a specific value (e.g., aholding current value), the ovonic threshold switch can switch back tothe non-conductive state. This switching of the ovonic threshold switchcan also happen if the polarities of the voltages across the ovonicthreshold switch are changed.

In FIG. 2A, when access component 204 is configured as an ovonicthreshold switch, memory device 200 can cause a voltage differencebetween two selected lines coupled to a selected memory cell 203 to havevalue, such that the ovonic threshold switch formed by access component204 of a selected memory cell 203 can switch from a non-conductive stateto a conductive state. This allows access to the selected memory cell.

FIG. 2B is a graph showing an example of an IV curve of an accesscomponent 204 of FIG. 2A. The IV graph in FIG. 2B shows an example whereaccess component 204 includes a phase change material configured tooperate as an ovonic threshold switch. As shown in FIG. 2B, accesscomponent 204 can be in a conductive state in regions 201 and 202 and ina non-conductive state in region 203. “I_(H)” and “−I_(H)” cancorrespond to holding current values of access component 204 whereaccess component 204 can switch between a conductive state and anon-conductive state. As shown in FIG. 2B, access component 204 canswitch from a non-conductive state (e.g., region 203) to a conductivestate (e.g., region 201) when a voltage across memory cell 203 (FIG. 2A)exceeds a threshold voltage (Vt) of the ovonic threshold switch formedin access component 204. In the conductive state (region 201), the valueof current flowing through access component 204 can be greater thanholding current value I_(H). When the value of current flowing throughaccess component 204 falls below holding current value I_(H), accesscomponent 204 can switch from a conductive state (e.g., region 201) to anon-conductive state (e.g., region 203).

Similarly, as shown in FIG. 2B, access component 204 can switch betweennon-conductive state (e.g., region 203) and conductive state (e.g.,region 202) depending on the value of voltage across memory cell 203(FIG. 2) relative to that of threshold voltage (−Vt) and the value ofcurrent flowing through access component 204 relative to that of holdingcurrent value −I_(H).

Memory device 200 of FIG. 2A can include memory devices and operateusing memory operations similar to or identical to memory devices andoperations described below with reference to FIG. 3 through FIG. 16.

FIG. 3 shows a schematic diagram of a portion of a memory device 300including a switching circuit 340 (e.g., column switching circuit),according to an embodiment of the invention. Memory device 300 can beassociated with memory device 100 of FIG. 1 or memory device 200 of FIG.2A. For example, memory array 302 of FIG. 3 can form a portion of memoryarray 102 of memory device 100 of FIG. 1 or a portion of memory array202 of memory device 200 of FIG. 2A.

As shown in FIG. 3, memory array 302 can include memory cells 303arranged in rows 321, 322, 323, and 324 and columns 311, 312, 313, and314. Memory device 300 can include lines 351, 352, 353, and 354, whichcan correspond to lines 251, 252, 253, and 254 of FIG. 2A. Memory device300 can include lines 371, 372, 373, and 374. Lines 371, 372, 373, and374 of FIG. 3 can correspond to lines 271, 272, 273, and 274 of FIG. 2A.FIG. 3 shows an example of four lines 351, 352, 353, and 354 and fourlines 371, 372, 373, and 374 and 16 memory cells 303. The number oflines and memory cells can vary.

Each of memory cells 303 can include an access component 304 and astorage element 305. Memory cells 303 can be configured to operate asmemory cells 203 of FIG. 2A. For example, storage element 305 can beconfigured to store information. Access component 304 can be configuredto access storage element 305. Access component 304 and storage element305 in FIG. 3 can include materials (e.g., phase change materials)similar to or identical to those of access component 204 and storageelement 205, respectively, of FIG. 2A.

Memory device 300 can include select circuits 306 and 307 that can beconfigured to access memory cells 303 during a memory operation. Selectcircuits 306 and 307 can be part of row and column decoders (such as rowand column decoders 106 and 107 of FIG. 1) of memory device 300.

Select circuit 306 can include transistors 361, 362, 363, and 364, whichcan be configured to turn on or off based on corresponding signals RS1,RS2, RS3, and RS4. Transistors 361, 362, 363, and 364, when turned on,can couple lines 351, 352, 353, and 354 to signals RD1, RD2, RD3, andRD4, respectively. Lines 351, 352, 353, and 354 can carry signals R1,R2, R3, and R4. The values (e.g., voltage values) of signals R1, R2, R3,and R4 can be based on the values of signals RD1, RD2, RD3, and RD4,respectively, when transistors 361, 362, 363, and 364 turn on.

Select circuit 307 can include transistors 381, 382, 383, and 384, whichcan be configured to turn on or off based on corresponding signals CS1,CS2, CS3, and CS4. Transistors 381, 382, 383, and 384, when turned on,can couple lines 371, 372, 373, and 374 to signals CD1, CD2, CD3, andCD4, respectively. Lines 371, 372, 373, and 374 can carry signals C1,C2, C3, and C4. The values (e.g., voltage values) of signals C1, C2, C3,and C4 can be based on the values of signals CD1, CD2, CD3, and CD4,respectively, when transistors 381, 382, 383, and 384 turn on.

Switching circuit 340 can include switches 341, 342, 343, and 344. Eachof switches 341, 342, 343, and 344 can be configured to turn on andcouple a corresponding line 371, 372, 373, or 374 to a line 349 during amemory operation. An access control unit 348 can be configured toprovide line 349 with a voltage in the form of a signal DSC. A materialof switches 341, 342, 343, and 344 can be similar to or identical tothose of access component 304. For example, each of switches 341, 342,343, and 344 can include a variable resistance material (e.g., a phasechange material). Switches 341, 342, 343, and 344 can be configured tooperate as ovonic threshold switches.

In a memory operation, one of lines 371, 372, 373, and 374 can be aselected line (e.g., selected column access line) to access a selectedmemory cell. One of lines 351, 352, 353, and 354 can also be a selectedline (e.g., selected row access line). The selected line among lines371, 372, 373, and 374 can be coupled to line 349 in a memory operationthrough one of switches 341, 342, 343, and 344 that turns on. Thus, in amemory operation, the voltage on the selected line among lines 371, 372,373, and 374 can have value based on the value of the voltage on line349. Line 349 can be provided with a voltage such that a voltagedifference between the selected line among lines 371, 372, 373, and 374and the selected line among lines 351, 352, 353 and 354 can turn onaccess component 304 of the selected memory cell.

In the following example memory operation, memory cell 303 located atcross point of row 324 and column 314 is assumed to be a selected memorycell. Other memory cells 303 can be referred to as unselected memorycells. In this example, lines 354 and lines 374 can be referred to asselected lines. Lines 351, 352, 353, 371, 372, and 373 can be referredto as unselected lines.

In the example memory operation, memory device 300 can turn on switch344. Switches 341, 342, and 343 can be turned off. Since switch 344 isturned on, line 374 is coupled to line 349 through switch 344. Thus, thevoltage on line 374 can have a value based on the value of the voltageon line 349. Memory device 300 can also apply a voltage on line 354. Thevoltages on lines 354 and 349 can have values, such that their voltagedifference can cause access component 304 of the selected memory cell toturn on. This allows access to storage element 305 of the selectedmemory cell.

In the above example, memory device 300 can also apply voltages to theunselected lines (lines 351, 352, 353, 371, 372, and 373). The values ofthe voltages applied to the unselected lines can have a value, such thata voltage difference between each of lines 351, 352, and 353 and each oflines 371, 372, and 373 are insufficient to turn on access component 304of the unselected memory cells. Voltages applied to the unselected linescan have values, such that a voltage difference between line 374 andeach of lines 351, 352, and 353 and a voltage difference between line354 and each of lines 371, 372, and 373 can be insufficient to turn onaccess component 304 of the unselected memory cells coupled to theselected lines (e.g., memory cells at intersections of columns 311, 312,and 313 and rows 324 and memory cells at intersections of rows 321, 322,and 323 and column 314). Thus, unselected memory cells 303 are notaccessed.

FIG. 4 is an example timing diagram for the signals shown in FIG. 3during a memory operation, according to an embodiment of the invention.In FIG. 4, T1 through T4 represent different times (e.g., during anaccess stage) in the example memory operation. V0, V1, V2, V3, V4, V5,and V6 represent different voltages. The waveforms associated with thesignals shown in FIG. 4 are not scaled. The following description belowwith reference to FIG. 3 and FIG. 4 assumes that memory cell 303 at thecross point of row 324 and column 314 (FIG. 3) is a selected memorycell.

In FIG. 4, a time interval between times T3 and T4 in FIG. 4 can be atime interval where the selected memory cell is accessed. If the memoryoperation is a read operation, as described above with reference to FIG.3 and FIG. 4, memory device 300 can perform a sense stage after theaccess stage (e.g., after time T4) to sense information from theselected memory cell. If the memory operation is a write operation, asdescribed above with reference to FIG. 3 and FIG. 4, memory device 300can perform a program stage after the access stage (e.g., after time T4)to store information in the selected memory cell.

In FIG. 4, a voltage difference between signal C4 on line 374 (e.g.,selected column access line) and signal R4 on line 354 (e.g., selectedrow access line) can correspond to a voltage difference between voltagesV6 and V1 on signals C4 and R4, respectively. Between times T3 and T4,voltage V6 of signal C4 can be based on voltage V6 of signal DSC.Voltage V1 of signal R4 can be based on voltage V1 of signal DR4. Memorydevice 300 can be configured to provide voltage V1 and V6 with voltagevalues, such that the voltage difference between voltages V6 and V1(e.g., V6−V1) can turn on access component 304 of the of the selectedmemory cell 303. In this description, a reference to a first voltage(e.g., voltage associated with a signal on a first line, such as aconductive line) being based on a second voltage (e.g., voltageassociated with a signal on a second line) means that the first voltagecan be substantially equal to the second voltage. It can also means thatthe first and second voltages may have a small voltage differencebetween them due to, for example, a small voltage drop in the element(e.g., a switch or a transistor) between the two lines that respectivelycarry the first and second voltages. Here, for example, a reference ofvoltage V6 of signal C4 can be based on voltage V6 of signal DSC meansthat voltage V6 of signal C4 can be substantially equal to voltage V6 ofsignal DSC. It can also mean that a small voltage drop may occur in theelement (e.g., switch 344) between line 374 that carries signal C4 andline 349 that carries signal DSC.

Voltages V1 and V6 can have the same polarity or opposite polarities.For example, voltage V1 can have a negative value and voltage V6 canhave a positive value. As shown in FIG. 4, voltages V1 and V6 can haveexample values of −5 (minus five) and five volts, respectively. Thus, inthis example, the voltage difference between signals C4 and R4 isV6−V1=5−(−5)=10 volts. Access component 304 can be configured to turn onwith this voltage difference between voltages V6 and V1 (e.g., 10volts).

Providing voltage V1 to signal R4 (between times T3 and T4) can includecoupling line 354 to signal RD4. Transistor 364 can be turned on basedon signal RS4 to couple line 354 to signal RD4. Memory device 300 can beconfigured to provide voltage V3 to signal RS4 with a voltage value toturn on transistor 364. For example, voltage V3 can have a value ofapproximately zero volts when voltage V1 has a negative value (e.g., −5volts). Alternatively voltage V3 can have another value, such aspositive value. For example, voltage V3 can have a value ofapproximately three volts.

Providing voltage V6 to signal C4 (between times T3 and T4) can includeseveral activities. For example, between times T2 and T3, memory device300 can turn on transistor 384 to couple line 374 to signal CD4 in orderto cause signal C4 on line 374 to have a voltage (e.g., V2) based onvoltage V2 provided to signal CD4. Switch 344 can be turned on betweentimes T2 and T3. Memory device 300 can be configured to provide voltageV2 with a voltage value, such that a voltage difference between voltagesV6 and V2 (e.g., V6−V2) can exceed the threshold voltage of switch 344between times T2 and T3 to turn on switch 344. Memory device 300 canturn off transistor 384 (e.g., between times T3 and T4) to decouple line374 from signal CD4 when switch 344 turns on. Thus, between times T3 andT4, line 374 is coupled to line 349 (associated with signal DSC).Therefore, as shown in FIG. 4, between times T3 and T4, signal C4 can beprovided with voltage V6, which is based on voltage V6 provided tosignal DSC.

Memory device 300 can provide different voltages (e.g., V2 and V4) tosignal CS4 during different time intervals between times T1 and T4 inorder to turn on or off transistor 384 during an access stage (e.g.,between times T1 and T4) of the above example memory operation. Forexample, as shown in FIG. 4, signal CS4 can be provided with voltage V2between times T1 and T2 and between times T3 and T4 and voltage V4between times T2 and T3. Memory device 300 can be configured to providevoltage V4 to signal CS4 with a voltage value to turn on transistor 384.For example, voltage V4 can have a value of approximately zero voltswhen voltage V2 has a negative value (e.g., −2 volts). Alternativelyvoltage V4 can have another value, such as a positive value. Forexample, voltage V4 can have a value of approximately three volts.

Other signals in FIG. 4 can be provided with voltages (e.g., V0 and V5).For example, as shown in FIG. 4, signals R1, R2, R3, C1, C2, and C3 canbe provided with a voltage (e.g., V0) based on voltage V0 from signalsRD1, RD2, RD3, CD1, CD2, and CD3, respectively. This can be done by, forexample, providing voltage V5 to signals RS1, RS2, RS3, CS1, CS2, andCS3 to turn on transistors 361, 362, 363, 381, 382, and 383 (FIG. 3).

Memory device 300 can be configured to provide voltage V5 with a voltagevalue to turn on transistors 361, 362, 363, 364, 381, 382, 383, and 384.Voltage V5 can have a positive value. For example, voltage V5 can have avalue of approximately three volts.

Memory device 300 can be configured to provide voltage V0 with a voltagevalue such that switches 341, 342, and 343 (FIG. 3) and access component304 of each of unselected memory cells 303 can remain in anon-conductive state (e.g., turned off). For example, voltage V0 canhave a value of approximately zero volts.

The above description of the example memory operation assumes thatmemory cell 303 at the cross point of row 324 and column 314 is aselected memory cell. Similar operations can be applied to other memorycells among memory cells 303. For example, if memory cell 303 located atrow 321 and column 311 is a selected memory cell during a memoryoperation, then only switch 341 can be turned on (e.g., between times T3and T4) to couple line 371 to line 349. Other switches 342, 343, and 344and access component 304 of unselected memory cells 303 can remainturned off. In this example, a voltage difference (e.g., V6−V1) betweenlines 371 and 351 (selected lines) can turn on access component 304 ofthe selected memory cell 303 located at the cross point of row 321 andcolumn 311.

After the access component (e.g. access component 304 of selected memorycell 303) is turned on, a sense stage or a program stage can beperformed. For this purpose the appropriate sense or program voltage (orcurrent) can be supplied to the selected cell through the switch coupledto the selected column access line.

FIG. 5 shows a schematic diagram of a portion of a memory device 500including a switching circuit 540 (e.g., row switching circuit),according to an embodiment of the invention. Memory device 500 caninclude elements similar to or identical to those of memory device 300of FIG. 3. Such elements are given the same designation labels. Forsimplicity, detailed description of similar or identical elementsbetween FIG. 3 and FIG. 5 is not repeated in the description of FIG. 5.In FIG. 3, switching circuit 340 can be coupled to lines 371, 372, 373,and 374 associated with columns 311, 312, 313, and 314. Unlike FIG. 3,switching circuit 540 in FIG. 5 in memory device can be coupled to lines351, 352, 353, and 354 associated with rows 321, 322, 323, and 324.

Switching circuit 540 can include switches 541, 542, 543, and 544. Eachof switches 541, 542, 543, and 544 can be configured to turn on andcouple a corresponding line 351, 352, 535 and 354 to a line 549 during amemory operation. An access control unit 548 can be configured toprovide line 549 with a voltage in the form of a signal DSR.

In a memory operation, one of lines 371, 372, 373, and 374 can be aselected line (e.g., selected column access line) to access a selectedmemory cell. One of lines 351, 352, 353, and 354 can also be a selectedline (e.g., selected row access line). The selected lines among lines351, 352, 353, and 354 can be coupled to line 549 in a memory operationthrough one of switches 541, 542, 543, and 544 that turns on. Thus, in amemory operation, the voltage on the selected line among lines 351, 352,353, and 354 can have value based on the value of the voltage on line549. Line 549 can be provided with a voltage such that a voltagedifference between the selected line among lines 351, 352, 353, and 354and the selected line among lines 371, 372, 373, and 374 can turn onaccess component 304 of the selected memory cell.

In the following example memory operation, memory cell 303 located atcross point of row 324 and column 314 is assumed to be a selected memorycell. Other memory cells 303 can be referred to as unselected memorycells. In this example, lines 354 and lines 374 can be referred to asselected lines. Lines 351, 352, 353, 371, 372, and 373 can be referredto as unselected lines.

In the example memory operation, memory device 300 can turn on switch544. Switches 541, 542, and 543 can be turned off. Since switch 544 isturned on, line 354 is coupled to line 549 through switch 544. Thus, thevoltage on line 354 can have a value based on the value of the voltageon line 549. Memory device 300 can also apply a voltage on line 374. Thevoltages on lines 354 and 374 can have values, such that their voltagedifference can cause access component 304 of the selected memory cell toturn on. This allows access to storage element 305 of the selectedmemory cell.

In the above example, memory device 300 can also apply voltages to theunselected lines (lines 351, 352, 353, 371, 372, and 373). The values ofthe voltages applied to the unselected lines can have a value, such thata voltage difference between each of lines 351, 352, and 353 and each oflines 371, 372, and 373 are insufficient to turn on access component 304of the unselected memory cells. Voltages applied to the unselected linescan have values, such that a voltage difference between line 374 andeach of lines 351, 352, and 353 and a voltage difference between line354 and each of lines 371, 372, and 373 can be insufficient to turn onaccess component 304 of the unselected memory cells coupled to theselected lines (e.g., memory cells at intersections of columns 311, 312,and 313 and rows 324 and memory cells at intersections of rows 321, 322,and 323 and column 314). Thus, unselected memory cells 303 are notaccessed.

FIG. 6 is an example timing diagram for the signals shown in FIG. 5during a memory operation, according to an embodiment of the invention.The following description with reference to FIG. 5 and FIG. 6 assumesthat memory cell 303 at the cross point of row 324 and column 314 (FIG.5) is a selected memory cell. Memory cell 303 typically has similarbehavior for currents flowing in opposite directions but can have someasymmetry. Thus, the waveforms of the signals in FIG. 6 can be similarto or identical to those of FIG. 4, except that signals associatedcolumns 311, 312, 313, and 314 and with DSC in FIG. 3 are exchanged withthe signals associated with rows 321, 322, 323, and 324 and with DSR inFIG. 5 and, if the cell asymmetry is large, the voltage polarity of eachsignal should be reversed.

FIG. 7 shows a schematic diagram of a portion of a memory device 700including switching circuits 340 and 540 (e.g., column and row switchingcircuits), according to an embodiment of the invention. Memory device700 can include elements similar to or identical to those of memorydevice 300 of FIG. 3 and memory device 500 of FIG. 5. Such elements aregiven the same designation labels. For simplicity, detailed descriptionof similar or identical elements among FIG. 3, FIG. 5, and FIG. 7 is notrepeated in the description of FIG. 7. As shown in FIG. 7, memory device700 can include a combination of both switching circuits 340 and 540.Thus, in a memory operation to access a selected memory cell (one ofmemory cells 303 in FIG. 7), a selected line among lines 371, 372, 373,and 374 can be coupled to line 349. A selected line among lines 351,352, 353, and 354 can be coupled to line 549.

FIG. 8 is an example timing diagram for signals shown in FIG. 7, duringa memory operation, according to an embodiment of the invention. Thefollowing description with reference to FIG. 7 and FIG. 8 assumes thatmemory cell 303 at the cross point of row 314 and column 324 (FIG. 7) isa selected memory cell. The waveforms of the signals in FIG. 8 can besimilar to those of FIG. 4, except for the waveforms of signals RS1,RS2, RS3, RD4, RS4, R4 and DSR in FIG. 8.

In FIG. 8, a time interval between times T3 and T4 in FIG. 8 can be atime interval where the selected memory cell (one of memory cells 303 inFIG. 7) is accessed. Memory device 700 can be configured to providesignals CD4, CS4, C4, and DSC with voltages similar to those describedabove with reference to FIG. 3 and FIG. 4. For example, between times T3and T4, signal C4 associated with selected line 374 (e.g., selectedcolumn access line) can be provided with voltage V6.

Between times T3 and T4, signal R4 associated with selected line 354(e.g., selected row access line) can be provided with a voltage V10.Memory device 700 can be configured to provide voltage V10 with avoltage value, such that the voltage difference between voltages V6 andV10 (e.g., V6−V10) can turn on access component 304 of the of theselected memory cell.

Voltages V10 and V6 can have the same polarity or opposite polarities.For example, voltage V10 can have a negative value and voltage V6 canhave a positive value. As shown in FIG. 4, voltages V10 and V6 can haveexample values of −5 (minus five) and five volts, respectively. Thus, inthis example, the voltage difference between signals C4 and R4 isV10−V6=−5−(5)=−10 volts. Access component 304 can be configured to turnon with this voltage difference V10−V6 (e.g., −10 volts).

Between times T3 and T4 in FIG. 8, voltage V10 of signal R4 can be basedon voltage V10 of signal DSR. Providing voltage V10 to signal R4(between times T3 and T4) can include several activities. For example,between times T2 and T3, memory device 700 can turn on transistor 364 tocouple line 354 to signal RD4 in order to cause signal R4 on line 354 tohave voltage V9 based on voltage V9 provided to signal RD4. Switch 544can be turned on between times T2 and T3. Memory device 700 can beconfigured to provide voltage V9 with a voltage value, such that avoltage difference between voltages V9 and V10 (e.g., V9−V10) can exceedthe threshold voltage of switch 544 between times T2 and T3 to turn onswitch 544. Memory device 700 can turn off transistor 364 (e.g., betweentimes T3 and T4) to decouple line 354 from signal RD4 when switch 544turns on. Thus, between times T3 and T4, line 354 is coupled to line 549(associated with signal DSR). Therefore, as shown in FIG. 8, betweentimes T3 and T4, signal R4 can be provided with voltage V10, which isbased on voltage V10 provided to signal DSR.

Memory device 700 can provide different voltages (e.g., V0 and V7) tosignal RS4 during different time intervals between times T1 and T4 inorder to turn on or off transistor 364 during an access stage (e.g.,between times T1 and T4) of the above example memory operation. Forexample, as shown in FIG. 8, signal RS4 can be provided with voltage V0between times T1 and T2 and between times T3 and T4 and voltage V7between times T2 and T3. Memory device 700 can be configured to providevoltage V7 to signal RS4 with a voltage value to turn on transistor 364.For example, voltage V7 can have a value of approximately three voltswhen voltage V9 has value of approximately two volts.

In the memory device (e.g., memory device 100, 200, 300, 500, or 700)described above with reference to FIG. 1 through FIG. 8, some componentsof the memory device can be structured with a relatively smaller size(e.g., smaller footprint). This can allow more area for other components(e.g., memory cells) of the memory device. Thus, memory cell density ofthe memory device for a given device size (e.g., die size) can beincreased. For example, some or all of transistors (e.g., transistors361, 362, 363, 364, 381, 382, 383, and 384) of select circuit 306 or307, or both, in FIG. 3, FIG. 5, and FIG. 7 can be structured with arelatively smaller size. This can be achieved, in part, becauseswitching circuits 340 and 540 can be included in the memory device toassist transistors of select circuit 306 or 307, or both, in drivingsignals (e.g., voltage, current, or both) to lines (e.g., access lines)in the memory array of the memory device.

FIG. 9 shows a schematic diagram of a portion of a memory device 900including multiple memory arrays 901, 902, and 903, according to anembodiment of the invention. Memory device 900 can include elementssimilar to or identical to those of memory array 302 of FIG. 3, such aslines (e.g., row access lines) 351, 352, 353, and 354, transistors 361,362, 363, and 364, and signals DSC, RD1, RD2, RD3, RD4, RS1, RS2, RS3,and RS4. Each of memory arrays 901, 902, and 903 can include elementssimilar to or identical to those of memory array 302 of FIG. 3. Suchelements are not shown in FIG. 9 for simplicity. FIG. 9 shows an examplewhere memory device 900 can have three memory arrays 901, 902, and 903.The number of memory arrays can vary.

As shown in FIG. 9, memory arrays 901, 902, and 903 can be coupled tothe same lines 351, 352, 353, and 354 and same transistors 361, 362,363, and 364. Each of memory arrays 901, 902, and 903 can include aswitching circuit 940. Switching circuit 940 can include elementssimilar to or identical to those of switching circuit 340 of FIG. 3 andcan be configured to operate similarly to or identically to switchingcircuit 340 of FIG. 3.

In FIG. 9, memory device 900 can be configured to apply voltages tolines 351, 352, 353, and 354 through transistors 361, 362, 363, and 364,respectively, during a memory operation to access a selected memory cellin one of memory arrays 901, 902, and 903.

Memory device 900 can include a select circuit 907 having differentgroups (e.g., three groups) of transistors 381, 382, 383, and 384. Eachgroup of transistors 381, 382, 383, and 384 can be configured to applyvoltages to one of corresponding groups (e.g., three groups) of lines371, 372, 373, and 374. The voltages applied to the groups of lines 371,372, 373, and 374 can have different values to selectively access aselected memory cell in one of memory arrays 901, 902, and 903. Suchvoltages can be in the form of signals, such as signals CD1 ₁, CD2 ₁,CD3 ₁, CD4 ₁, CD1 ₂, CD2 ₂, CD3 ₂, CD4 ₂, CD1 ₃, CD2 ₃, CD3 ₃, and CD4₃.

Transistors 381, 382, 383, and 384 in the same group and in differentgroups can be configured to turn on or off based on a different signal,such as one of different signals CS1 ₁, CS2 ₁, CS3 ₁, CS4 ₁, CS1 ₂, CS2₂, CS3 ₂, CS4 ₂, CS1 ₃, CS2 ₃, CS3 ₃, and CS4 ₃. Each of transistors381, 382, 383, and 384 in the groups can be configured to couple acorresponding line (e.g., one of lines 371, 372, 373, and 374) to one ofsignals CD1 ₁, CD2 ₁, CD3 ₁, CD4 ₁, CD1 ₂, CD2 ₂, CD3 ₂, CD4 ₂, CD1 ₃,CD2 ₃, CD3 ₃, and CD4 ₃.

Memory device 900 can be configured to access a selected memory cell inone of memory arrays 901, 902, and 903 in a fashion similar to that ofmemory device 300 of FIG. 3. For example, if a memory cell (not shown inFIG. 9) at the cross point of line 374 in memory array 903 and line 354is a selected memory cell in a memory operation (e.g., a read or writeoperation), line 374 coupled to memory array 903 and line 354 can bereferred to as selected lines. In this example, signals DSC, RD4, CD4 ₃,and CS4 ₃ can be provided with voltages similar to signals DSC, RD4,CD4, and CS4 described above with reference to FIG. 3 and FIG. 4. Thisallows the selected memory cell in memory array 903 to be accessed.

In the example above with reference to FIG. 9, unselected memory cellsin memory arrays 901, 902, and 903 are not accessed. Signals RD1, RD2,and RD3 in FIG. 9 in the example can be provided with voltages similarto signals RD1, RD2, and RD3 described above with reference to FIG. 3and FIG. 4. Each of signals CD1 ₁, CD2 ₁, CD3 ₁, CD4 ₁, CD1 ₂, CD2 ₂,CD3 ₂, CD4 ₂, CD1 ₃, CD2 ₃, and CD3 ₃ in FIG. 9 in the example can beprovided with a voltage (e.g., V0 in FIG. 4) similar to that of signalCD1, CD2, or CD3 of FIG. 4. Each of signals CS1 ₁, CS1 ₁, CS3 ₁, CS4 ₁,CS1 ₂, CS2 ₂, CS3 ₂, CS4 ₂, CS1 ₃, CS2 ₃, and CS3 ₃ in FIG. 9 in thisexample can be provided with a voltage (e.g., V5 in FIG. 4) similar tothat of signal CS1, CS2, or CS3 of FIG. 4.

FIG. 9 shows an example where memory device 900 can have three memoryarrays 901, 902, and 903. The number of memory arrays can vary.

FIG. 9 shows an example where each of memory arrays 901, 902, and 903includes one switching circuit (e.g., switching circuit 940) coupled toa corresponding set of lines (e.g., column access lines) 371, 372, 373,and 374, as an example. Alternatively, each of memory arrays 901, 902,and 903 can include an additional switching circuit (e.g., switchingcircuit 540 in FIG. 5) coupled to lines 351, 352, 353, and 354 (e.g.,row access lines).

FIG. 10 shows a schematic diagram of a portion of a memory device 1000including multiple memory arrays 901, 902, and 903 and a select circuit1007 shared by memory arrays 901, 902, and 903, according to anembodiment of the invention. Memory device 1000 can include elementssimilar to or identical to those of memory device 300 of FIG. 3 andmemory device 900 of FIG. 9. Such elements are given the samedesignation labels. For simplicity, detailed description of similar oridentical elements among FIG. 3, FIG. 9, and FIG. 10 is not repeated inthe description of FIG. 10.

Memory device 1000 can include a select circuit 1007 having differentgroups (e.g., three groups) of transistors 1081, 1082, 1083, and 1084and different groups (e.g., three groups) of lines 371, 372, 373, and374. Each group of transistors 1081, 1082, 1083, and 1084 can beconfigured to couple lines 1071, 1072, 1073, and 1074 to a correspondinggroup of lines 371, 372, 373, and 374. In memory operation, transistors381, 382, 383, and 384 can turn on to couple lines 1071, 1072, 1073, and1074 to signals CD1, CD2, CD3, and CD4, respectively. Then, signals CD1,CD2, CD3, and CD4 from lines 1071, 1072, 1073, and 1074 can be appliedto lines 371, 372, 373, and 374, respectively, in of one memory arrays901, 902, and 903.

In FIG. 10, transistors 1081, 1082, 1083, and 1084 within the same groupcan be configured to turn on or off based on the same signal, such asone of signals DK₁, DK₂, and DK₃. During a memory operation, dependingon which of memory arrays 901, 902, and 903 is a selected memory arrayto access a selected memory cell in the selected memory array, one ofsignals DK₁, DK₂, and DK₃ can be provided with a voltage to turn ontransistors 1081, 1082, 1083, and 1084 associated with the selectedmemory array (one of memory arrays 901, 902, and 903). For example, ifmemory array 903 is selected to access a selected memory cell in memoryarray 903, then signal DK₃ can be provided with a voltage to turn ontransistors 1081, 1082, 1083, and 1084 associated with memory array 903.When turned on, transistors 1081, 1082, 1083, and 1084 associated withmemory array 903 can couple lines 371, 372, 373, 374 in memory array 903to lines 1071, 1072, 1073, and 1074. In this example, signals DK₂ andDK₃ can be provided with a voltage (e.g., V0 in FIG. 4) to turn off thegroups of transistors 1081, 1082, 1083, and 1084 coupled to memoryarrays 901 and 902 (e.g., unselected memory arrays). Thus, signals CD1,CD2, CD3, and CD4 are not provided to lines 371, 372, 373, 374 in memoryarray 901 and lines 371, 372, 373, 374 in memory array 902.

In a memory operation to access a selected memory cell in memory arrays901, 902, and 903, memory device 1000 can provide voltages to signalsDSC, CD1, CD2, CD3, CD4, CS1, CS2, CS3, CS4, RD1, RD2, RD3, RD4, RS1,RS2, RS3, and RS4 with values similar to or identical to those describedabove with reference to FIG. 3 and FIG. 4.

FIG. 11 shows a schematic diagram of a portion of a memory device 1100including multiple memory arrays 901, 902, and 903 and a select circuit1107 having resistors 1181, 1182, 1183, and 1184, according to anembodiment of the invention. Memory device 1100 can include elementssimilar to or identical to those of memory device 300 of FIG. 3, memorydevice 900 of FIG. 9, and memory device 1000 of FIG. 10. Such elementsare given the same designation labels. For simplicity, detaileddescription of similar or identical elements among FIG. 3, FIG. 9, FIG.10, and FIG. 11 is not repeated in the description of FIG. 11.

As shown in FIG. 10 and FIG. 11, three groups of resistors 1181, 1182,1183, and 1184 in FIG. 11 can replace the corresponding three groups oftransistors 1081, 1082, 1083, and 1084 in FIG. 10. A combination ofseparate lines 1101, 1102, and 1103 in FIG. 11 and their associatedsignals DSC1, DSC2, and DSC3 can replace line 340 and its associatedsignal DSC in FIG. 10.

In FIG. 11, each of resistors 1181, 1182, 1183, and 1184 can bestructured as a two-terminal resistor. Each of resistors 1181, 1182,1183, and 1184 can have a resistance value, such that each resistor candrive a signal (e.g., voltage or current signal) to a corresponding line371, 372, 373, or 374 when a memory cell coupled to the correspondingline is a selected memory cell. Additionally, the resistance value ofeach of resistors 1181, 1182, 1183, and 1184 can be selected, such thateach resistor can electrically isolate (in other words, does not drive)a signal to a corresponding line 371, 372, 373, or 374 when memory cells(not shown in FIG. 11) coupled to that corresponding line are unselectedmemory cells. As an example, each of resistors 1181, 1182, 1183, and1184 can have a value in the range of kilo Ohms (KΩ). For example, eachof resistors 1181, 1182, 1183, and 1184 can have a value ofapproximately 10KΩ to 50KΩ.

Resistors 1181, 1182, 1183, and 1184 can be located in (e.g., formed inor on) substrate of memory device 1100. An example of such a substratecan include substrate 1599 of FIG. 15. Alternatively, resistors 1181,1182, 1183, and 1184 can be part of lines 371, 372, 373, and 374,respectively, or can be part of paths from lines 371, 372, 373, and 374to a decoder (that can be similar to decoder 107 of FIG. 1) of memorydevice 1100. For example, resistors 1181, 1182, 1183, and 1184 can berealized as part of conductive lines (e.g., part of column accesslines), such as conductive lines 1271, 1272, 1273, and 1274 of FIG. 12.

As shown in FIG. 11, each of memory arrays 901, 902, and 903 can includea corresponding line 1101, 1102, and 1103 that can carry a correspondingsignal DSC1, DSC2, or DSC3. Memory device 1100 can be configured toprovide different voltages to signals DSC1, DSC2, and DSC3, depending onwhich of memory arrays 901, 902, and 903 is a selected memory array toaccess a selected memory cell in the selected memory array. For example,in a memory operation, one of signals DSC1, DSC2, and DSC3 (e.g., signalDSC3) associated with a selected memory array (e.g., memory array 903)can be provided with a voltage (e.g., 5V) similar to that of signal DSCin FIG. 4. The other signals (e.g., DSC1 and DSC2) associated withnon-selected memory arrays (e.g., memory arrays 901 and 902) can beprovided with another voltage (e.g., zero volts), such that switches(e.g., 341, 342, 343, and 344) in switching circuit 940 of thenon-selected memory arrays do not turn on.

For example, if a memory cell (not shown in FIG. 11) at the cross pointof line 374 in memory array 903 and line 354 is a selected memory cellin a memory operation (e.g., a read or write operation), signal DSC3 canbe provided with a voltage (e.g., 5V) similar to that of signal DSC inFIG. 4. Signals DSC1 and DSC2 can be provided with zero volts.

As described above with reference to FIG. 9, FIG. 10, and FIG. 11, eachof memory arrays 901, 902, and 903 includes switching circuit 940 (e.g.,a column switching circuit. Each of memory arrays 901, 902, and 903,however, can include a row switching circuit, such as switching circuit540 of FIG. 5 or FIG. 7.

FIG. 12 shows a structure of a portion of a memory device 1200,according to an embodiment of the invention. Memory device 1200 caninclude different device levels 1291, 1292, and 1293 in a z-direction.As shown in FIG. 12, device level 1292 can be between device levels 1291and 1293. Memory device 1200 can include a memory array 1202 that canoverlie a substrate (e.g., a semiconductor substrate) 1201. Memorydevice 1200 can be associated with memory device 300 of FIG. 3, suchthat the structure of memory array 1202 in FIG. 12 can form at least aportion of a structure of memory array 302 of FIG. 3. Memory device 1200can also be associated with memory device 900, 1000, or 1100 of FIG. 9,FIG. 10, or FIG. 11, respectively, such that the structure of memoryarray 1202 in FIG. 12 can form at least a portion of a structure of oneor more of memory arrays 901, 902, and 903 of FIG. 9, FIG. 10, and FIG.11.

As shown in FIG. 12, memory array 1202 can include conductive lines1249, 1251, and 1252 located in device level 1291 and extending (e.g.,length-wise) in an x-direction. Memory array 1202 can include conductivelines 1271, 1272, 1273, and 1274 located in device level 1293 andextending (e.g., length-wise) in a y-direction. The x-direction and they-direction can be perpendicular (or substantially perpendicular) toeach other and to the z-direction. Conductive lines 1249, 1251, 1252,1271, 1272, 1273, and 1274 can include conductive materials, such assingle metal, an alloy of metals, other conductive materials. Examplematerials for conductive lines, such as lines 1249, 1251, 1252, 1271,1272, 1273, and 1274, include Cu, W, Al, AlCu alloy, and AuAlCu alloy.

The structure of conductive lines 1249 can form an example structure forline 349 of FIG. 3. The structures of conductive lines 1251 and 1252 inFIG. 12 can form an example structure for two of lines 351, 352, 353,and 354 (e.g., lines 351 and 352) of FIG. 3. The structures ofconductive lines 1271, 1272, 1273, and 1274 in FIG. 12 can form examplestructures for lines 371, 372, 373, and 374, respectively, of FIG. 3.Thus, the structures of conductive lines 1251 and 1252 and conductivelines 1271, 1272, 1273, and 1274 can form part of access lines of memorydevice 1200. For example, the structures of conductive lines 1251 and1252 in can form part of row access lines of memory device 1200. Thestructures of conductive lines 1271, 1272, 1273, and 1274 in FIG. 12 canform of column access lines of memory device 1200.

Memory array 1202 can include device structures 1203, 1241, 1242, 1243,and 1244 located in device level 1292. Each of device structures 1203can include at least a portion of each of materials 1240, 1250, 1206,1207, 1208, and 1209 that are located at the cross point of one ofconductive lines 1251 and 1252 and one of lines conductive lines 1271,1272, 1273, and 1274. Each of device structures 1241, 1242, 1243, and1244 can include at least a portion of each of materials 1240, 1250,1206, 1207, 1208, and 1209 that are located at the cross point of one ofconductive lines 1249 and one of lines conductive lines 1271, 1272,1273, and 1274. Materials 1240 and 1250 can include materials similar toor identical to those of access component 304 and storage element 305,respectively, of FIG. 3. For example, materials 1240 and 1250 caninclude phase change materials (e.g., chalcogenides). Materials 1206,1207, 1208, and 1209 can include conductive materials, such as a singlemetal, an alloy of metals, other conductive materials. Examples of thesematerials include T1 Ti—TiN, C, and CN.

FIG. 12 shows an example of conductive lines (e.g., 1249, 1251, 1252,1271, 1272, 1273, and 1274) and device structures (e.g., 1203, 1241,1242, 1243, and 1244) arrange in four rows 1220 and four columns 1210.The number of conductive lines and device structures can vary and can bearranged in different numbers of rows and columns.

Memory device 1200 can include a conductive segment 1259, a material1215, and a material 1216. Conductive lines 1251 and 1252 can beelectrically decoupled. Conductive lines 1249 can be short-circuited byconductive segment 1259. Therefore, lines 1249 can behave as one linefrom an electrical stand-point. Conductive segment 1259 can be locatedin the same device level 1291 as conductive lines 1249 and can bedirectly coupled to conductive lines 1249. In a different embodiment(not shown), conductive lines 1249 can be coupled to each other througha conductive segment, at least partially on device level different fromdevice level 1291.

As shown in FIG. 12, material 1250 can overlie the length (e.g., lengthextending in the x-direction) of each of conductive lines 1249 in two ofrows 1220. Material 1215 can be coupled (e.g., can direct contact) tomaterial 1250 that overlies the length of each of conductive lines 1249in two of rows 1220. Materials 1250 and 1215 can include the samematerial (e.g., the same phase change material).

Material 1206 can overlie material 1259 and overlie each of conductivelines 1249 in two of rows 1220. Material 1216 can be coupled (e.g., candirect contact) to material 1206 that overlies the length of each ofconductive lines 1249 in two of rows 1220. Materials 1206 and 1216 caninclude the same material.

FIG. 12 shows an example of conductive segment 1259 and materials 1215and 1216 coupled to corresponding conductive lines 1249, material 1250,and 1206 in two rows 1220. Conductive segment 1259, material 1215, and1216 can be coupled to corresponding conductive lines 1249, material1250, and 1206 in more than two rows.

Device structures 1203 can be configured to operate as memory cells,which can correspond to memory cells 303 of FIG. 3. For example, in FIG.12, at least a portion (e.g., portion 1205) of material 1250 at each ofdevice structures 1203 can be configured to store information. At leasta portion (e.g., portion 1204) of material 1240 at each of devicestructures 1203 can be configured to operate as an access component,which can correspond to access component 304 of FIG. 3. At least aportion of each of materials 1206, 1207, 1208, and 1209 at each ofdevice structures 1203 can be configured to operate as an electrode toprovide signal through the memory cell. For simplicity, FIG. 12 shows alabel for portion 1205 at only some of device structures 1203.

Device structures 1241, 1242, 1243, and 1244 are not configured tooperate as memory cells. Thus, device structures 1241, 1242, 1243, and1244 are not configured to store information. For example, no portion ofmaterial 1250 at each of device structures 1241, 1242, 1243, and 1244 isconfigured to store information.

Device structures 1241, 1242, 1243, and 1244 can be configured tooperate as switches, which can correspond to switches 341, 342, 343, and344 of FIG. 3. For example, in FIG. 12, at least a portion (e.g.,portion 1247) of material 1240 at each of device structures 1241, 1242,1243, and 1244 can be configured to operate as a switch (e.g., as anovonic threshold switch). For simplicity, FIG. 12 shows a label forportion 1247 at only some of device structures 1241, 1242, 1243, and1244.

As shown in FIG. 12, device structures 1203 and device structures 1241,1242, 1243, and 1244 can directly contact conductive lines 1271, 1272,1273, and 1274 at different contact locations (e.g., contact locations1278 and 1279). Thus, each of the memory cells can be formed from devicestructures 1203 (e.g. at single contact locations 1278) and each of theswitches can be formed from device structures 1241, 1242, 1243, and 1244at different contact locations (e.g. multiple contact locations 1279 atthe cross points of lines 1249 and each of lines 1271, 1272, 1273, and1274). The total contact area at multiple contact locations 1279 of theswitches at device structures 1241, 1242, 1243 and 1244 can be greaterthan a contact area at single contact location 1278 of memory cells atdevice structures 1203.

Memory device 1200 can be configured to decrease the current densitythrough each contact location of the switches. Under normal operatingconditions (e.g., when the switches are driven with the same currentlimitation) in a memory operation, material 1250 overlying conductivelines 1249 can remain in a conductive state (e.g., a crystalline state).This can allow portion 1247 of material 1240 at each of devicestructures 1241, 1242, 1243, and 1244 to operate as a switch, such as anovonic threshold switch.

FIG. 13 shows a structure of a portion of a memory device 1300 includingconductive lines 1251 and 1349 having different widths, according to anembodiment of the invention. Memory device 1300 can include elementssimilar to or identical to those of memory device 1200 of FIG. 12. Suchelements are given the same designation labels. For simplicity, detaileddescription of similar or identical elements between FIG. 12 and FIG. 13is not repeated in the description of FIG. 13.

Memory device 1300 can be associated with memory device 300 of FIG. 3,such that the structure of memory array 1302 can form at least a portionof a structure of memory array 302 of FIG. 3. Memory device 1300 canalso be associated with memory device 900, 1000, or 1100 of FIG. 9, FIG.10, FIG. 11, respectively, such that the structure of memory array 1302can form at least a portion of a structure of one or more of memoryarrays 901, 902, and 903 of FIG. 9, FIG. 10, and FIG. 11.

As shown in FIG. 13, conductive line 1349 and materials 1250 and 1206overlying conductive line 1349 have width 1392. Each of conductive lines1251 and 1252 has a width 1391. Width 1392 can be greater than width1391. Greater width can increase the area of material 1250 at the crosspoints of lines 1271, 1272, 1273, and 1274 and lines 1249, 1251, and1252, relative to the area of material 1250 at the cross points of lines1271, 1272, 1273, and 1274 and lines 1251, and 1252. Thus, under normaloperating conditions in a memory operation, material 1250 overlyingconductive line 1349 can remain in a conductive state (e.g., acrystalline state). This can allow portion 1247 of material 1240 at eachof device structures 1241, 1242, 1243, and 1244 to operate as a switch,such as an ovonic threshold switch.

FIG. 14 shows a structure of a portion of a memory device 1400,according to an embodiment of the invention. Memory device 1400 caninclude elements similar to or identical to those of memory device 1200of FIG. 12. Such elements are given the same designation labels. Forsimplicity, detailed description of similar or identical elementsbetween FIG. 12 and FIG. 14 is not repeated in the description of FIG.14. For example, structures 1203 (configured to operate as memory cells)associated with conductive line 1453 in one of rows 1220 can be similarto structures 1203 associated with conductive lines 1251 and 1252 in twoof rows 1220.

Memory device 1400 can be associated with memory device 300 of FIG. 3,such that the structure of memory array 1402 can form at least a portionof a structure of memory array 302 of FIG. 3. Memory device 1400 canalso be associated with memory device 900, 1000, or 1100 of FIG. 9, FIG.10, FIG. 11, respectively, such that the structure of memory array 1402can form at least a portion of a structure of a structure of one or moreof memory arrays 901, 902, and 903 of FIG. 9, FIG. 10, and FIG. 11.

In FIG. 14, memory device 1400 can include device structures 1441, 1442,1443, and 1444, each of which can include a portion of each of materials1240, 1207, 1208, 1209, and 1406. Material 1406 can be similar to oridentical to material 1206 (e.g., conductive material) described abovewith reference to FIG. 12. In comparing FIG. 14 with FIG. 12, material1250 (e.g., phase change material) in FIG. 12 can be excluded fromdevice structures 1441, 1442, 1443, and 1444 of memory device 1400 inFIG. 14.

As shown in FIG. 14, conductive line 1249 can include a width 1492. Eachof conductive lines 1251, 1252, and 1453 can include a width 1491. Width1492 can be greater than width 1491.

In an example process of forming device structures 1441, 1442, 1443, and1444 in FIG. 14, material 1250 can be initially (e.g., before material1406 is formed) included in device structures 1441, 1442, 1443, and1444. For example, material 1250 can be initially formed (e.g.,deposited) in device structures 1203 (as shown in FIG. 14) and in devicestructures 1441, 1442, 1443, and 1444 (not shown in FIG. 14) at the sametime (e.g., in the same processing step using the same material). Then,material 1250 can be removed from structures 1441, 1442, 1443, and 1444while material 1250 can be left in device structures 1203, as shown inFIG. 14. In the example process, a mask (e.g., a photoresist) can beconfigured (e.g., patterned) in order to mask a portion of device 1400at the area where device structures 1203 are located. Such a mask canalso be configured to expose the area where device structures 1441,1442, 1443, and 1444 are located. The example process can remove aportion of material 1250 at the exposed area. Then, material 1406 can beformed.

In another example process of forming device structures 1441, 1442,1443, and 1444 in FIG. 14, material 1250 can be formed in memory device1400 at only the area where device structures 1203 are located. Material1250 is not formed in memory device 1400 at the area where devicestructures 1441, 1442, 1443, and 1444 are located. Thus, this exampleprocess can omit a step of removing a portion of material 1250 from thearea where device structures 1203 are located.

In FIG. 14, device structures 1441, 1442, 1443, and 1444 can beconfigured to operate as switches, which can correspond to switches 341,342, 343, and 344 of FIG. 3. At each of device structures 1441, 1442,1443, and 1444, a portion of material 1209 can be configured to operateas an electrode (e.g., top electrode) of a switch and a combination of aportion of each of materials 1207, 1208, and 1406 can be configured tooperate as another electrode (e.g., bottom electrode of the switch). Asshown in FIG. 14, the combination of a portion of each of materials1207, 1208, and 1406 (that can form an electrode) can directly contactmaterial 1240 and a portion of conductive line 1249.

The description above with reference to FIG. 3 through FIG. 14 shows theswitching circuits being located at a border (e.g., an edge) of thememory array as an example. The locations of the switching circuits canbe located in other locations of the memory array.

FIG. 15 shows a structure of a portion of a memory device 1500 includingmultiple memory arrays 1501, 1502, and 1503 arranged in a stack,according to an embodiment of the invention. Each of memory arrays 1501,1502, and 1503 can include the structure of memory array 1202, 1302, or1402 of FIG. 12, FIG. 13, or FIG. 14. FIG. 15 shows three memory arrays1501, 1502, and 1503 as an example. The number of memory arrays in thestack can vary.

Memory device 1500 can include a substrate (e.g., a semiconductorsubstrate) 1599. As shown in FIG. 15, memory arrays 1501, 1502, and 1503can overlie each other and can be arranged in a stack over substrate1599. For example, memory array 1501 can overlie substrate 1599. Memoryarray 1502 can overlie memory array 1501. Memory array 1503 can overliememory array 1502.

Substrate 1599 can include a substrate portion 1506 where other parts ofmemory device 1500 can be located. For example, memory device 1500 caninclude select circuits (not shown in FIG. 15) that can includetransistors, such as transistors 361, 362, 363, 364, 381, 382, 383, and384 in FIG. 3, FIG. 9, FIG. 10, and FIG. 11. Such transistors of theselected circuits of memory device 1500 can be located in (e.g., formedin or on) substrate portion 1506. In another example, memory device 1500can select circuits (not shown in FIG. 15) that can include resistors,such as resistors 1181, 1182, 1183, and 1184 in FIG. 11. Such resistorsof memory device 1500 can be located in (e.g., formed in or on)substrate portion 1506.

Memory device 1500 can be associated with memory device 900 (FIG. 9),memory device 1000 (FIG. 10), or memory device 1100 (FIG. 11), such thatmemory arrays 1501, 1502, and 1503 can form at least a portion of memoryarrays 901, 902, and 903, respectively, of FIG. 9, FIG. 10, or FIG. 11.

FIG. 16 is a flow chart showing a method 1600, according to anembodiment of the invention. Method 1600 can form a memory device suchas memory device 300, 500, 700, 900, 1000, 1100, 1200, 1300, 1400, and1500 described above with reference to FIG. 3 through FIG. 15. Method1600 can include activities 1610, 1620, and 1630.

Activity 1610 can include forming conductive lines. The conductive linescan be formed such that one group of the conductive lines can extend inone direction (e.g., x-direction), and another group of the conductivelines can extend in another direction (e.g., y-direction). Theconductive lines can be formed such that one group of the conductivelines can pass over another group of the conductive lines at a number ofcross points. The conductive lines formed in activity 1610 can includeconductive lines 351, 352, 353, and 354 and conductive lines 371, 372,373, and 374 of FIG. 3, FIG. 5, FIG. 7, FIG. 9, FIG. 10, and FIG. 11.The conductive lines formed in activity 1610 can also include conductivelines 1249, 1349, 1251, and 1252 and conductive lines 1271, 1272, 1273,and 1274 of FIG. 12, FIG. 13, and FIG. 14.

Forming the conductive lines in activity 1610 can include forming one ofthe conductive lines with a width such that the width can be greaterthan the width of at least one of the other conductive lines. Forexample, activity 1610 can form conductive lines 1349, 1251 and 1252 ofFIG. 13.

Activity 1620 can include forming memory cells. Forming the memory cellsin activity 1620 can include forming device structures at some of thecross points, such that each of the device structures can include one ofthe memory cells. For example, activity 1620 can form device structures1203 of FIG. 12, FIG. 13, and FIG. 14, in which each of the devicestructures 1203 can include a memory cell.

Activity 1630 can include forming switches in the memory device. Theswitches (in activity 1630) and the memory cells (in activity 1620) canbe formed, such that the switches can be located at one group of thecross points and the memory cells can be located at another group of thecross points. Forming the switches in activity 1630 can include formingdevice structures at some of the cross points, such that each of thedevice structures can include one of the switches. For example, activity1630 can form device structures 1241, 1242, 1243, and 1244 of FIG. 12and FIG. 13, or device structures 1441, 1442, 1443, and 1444 of FIG. 14.

The individual activities of method 1600 do not have to be performed inthe order shown or in any particular order. Some activities may berepeated, and others may occur only once. Method 1600 can have more orfewer activities than those shown in FIG. 6. For example, method 1600can include the process of forming device structures 1203, 1241, 1242,1243, 1244, 1441, 1442, 1443, and 1444 described above with reference toFIG. 12, FIG. 13, and FIG. 14.

The illustrations of apparatuses (e.g., memory devices 100, 200, 300,500, 700, 900, 1000, 1100, 1200, 1300, 1400, and 1500) and methods(e.g., operating methods associated with the memory devices describedherein and method 1600) are intended to provide a general understandingof the structure of various embodiments and are not intended to providea complete description of all the elements and features of apparatusesthat might make use of the structures described herein. An apparatusherein refers to, for example, either a device (e.g., memory devices100, 200, 300, 500, 700, 900, 1000, 1100, 1200, 1300, 1400, and 1500) ora system (e.g., a computer, a cellular phone, or other electronicsystem) that includes a device such as memory devices 100, 200, 300,500, 700, 900, 1000, 1100, 1200, 1300, 1400, and 1500.

Any of the components described above with reference to FIG. 1 throughFIG. 16 can be implemented in a number of ways, including simulation viasoftware. Thus, apparatuses (e.g., memory devices 100, 200, 300, 500,700, 900, 1000, 1100, 1200, 1300, 1400, and 1500) described above mayall be characterized as “modules” (or “module”) herein. Such modules mayinclude hardware circuitry, single and/or multi-processor circuits,memory circuits, software program modules and objects and/or firmware,and combinations thereof, as desired and/or as appropriate forparticular implementations of various embodiments. For example, suchmodules may be included in a system operation simulation package, suchas a software electrical signal simulation package, a power usage andranges simulation package, a capacitance-inductance simulation package,a power/heat dissipation simulation package, a signaltransmission-reception simulation package, and/or a combination ofsoftware and hardware used to operate or simulate the operation ofvarious potential embodiments.

Memory devices 100, 200, 300, 500, 700, 900, 1000, 1100, 1200, 1300,1400, and 1500 may be included in apparatuses (e.g., electroniccircuitry) such as high-speed computers, communication and signalprocessing circuitry, single or multi-processor modules, single ormultiple embedded processors, multi-core processors, message informationswitches, and application-specific modules including multilayer,multi-chip modules. Such apparatuses may further be included assub-components within a variety of other apparatuses (e.g., electronicsystems), such as televisions, cellular telephones, personal computers(e.g., laptop computers, desktop computers, handheld computers, tabletcomputers, etc.), workstations, radios, video players, audio players(e.g., MP3 (Motion Picture Experts Group, Audio Layer 3) players),vehicles, medical devices (e.g., heart monitors, blood pressuremonitors, etc.), set top boxes, and others.

The embodiments described above with reference to FIG. 1 through FIG. 16include apparatuses and methods having a memory cell, first and secondconductive lines configured to access the memory cell, and a switchconfigured to apply a signal to one of the first and second conductivelines. In at least one of such embodiments, the switch can include aphase change material. Other embodiments including additional apparatusand methods are described.

The above description and the drawings illustrate some embodiments ofthe invention to enable those skilled in the art to practice theembodiments of the invention. Other embodiments may incorporatestructural, logical, electrical, process, and other changes. Examplesmerely typify possible variations. Portions and features of someembodiments may be included in, or substituted for, those of others.Many other embodiments will be apparent to those of skill in the artupon reading and understanding the above description.

What is claimed is:
 1. A method comprising: forming a first group ofconductive lines; forming a second group of conductive lines; formingmemory cells, wherein the memory cells are formed such that each of thememory cells is located between a conductive line in the first group ofconductive lines and a conductive line in the second groups ofconductive lines; and forming switches, wherein the switches are formedsuch that each of the switches is located between a conductive line inthe first group of conductive lines and one or more conductive line inthe second groups of conductive lines, wherein each of the switchesincludes a phase change material.
 2. The method of claim 1, furthercomprising: forming a conductive segment coupled to a first conductiveline in the first group of conductive lines and coupled to a secondconductive line in the first group of conductive lines.
 3. The method ofclaim 1, wherein forming the first group of conductive lines includesforming a first conductive line having a first width and forming asecond conductive line having a second width, such that the first widthis greater than the second width.
 4. The method of claim 1, whereinforming the switches includes: forming a first electrode of each of theswitches that directly contacts a first conductive line in the firstgroup conductive lines; forming a phase change material directlycontacting the first electrode; and forming a second electrode of eachof the switches, such that the second electrode directly contacts thephase change material and directly contacts a conductive line of thesecond group conductive lines.
 5. A method comprising: forming a firstgroup of conductive lines such that each conductive line in the firstgroup of conductive lines including a length in a first direction and awidth in a second direction and such that the width of a firstconductive line in the first group of conductive lines is greater thewidth of each of second conductive lines in the first group ofconductive lines; forming a second group of conductive lines such thateach conductive line in the second group of conductive lines including alength in the second direction and such that the second group ofconductive lines pass over the first group of conductive lines at crosspoints; forming memory cells such that each of the memory cells islocated between respective cross point of the cross points.
 6. Themethod of claim 5, wherein each of the memory cells includes a phasechange material.
 7. The method of claim 5, further comprising: formingswitches at respective cross points of the first conductive line in thefirst group of conductive lines and the second group of conductivelines.
 8. The method of claim 7, further comprising: forming anelectrode of each of the switches such that the electrode directlycontacts the first conductive line in the first group conductive lines.9. The method of claim 8, further comprising: forming an additionalelectrode of each of the switches such that the additional electrodedirectly contacts a respective conductive line of the second group ofconductive lines.
 10. The method of claim 9, further comprising: forminga phase change material between the electrode and the additionalelectrode of each of the switches.
 11. A method comprising: forming afirst group of conductive lines such that each conductive line in thefirst group of conductive lines including a length in a first direction;forming a second group of conductive lines such that each conductiveline in the second group of conductive lines including a length in asecond direction, such that the second group of conductive lines passover a first conductive line in the first group of conductive lines atfirst cross points and pass over second conductive lines in the firstgroup of conductive lines at second cross points; forming switches atthe first cross points, each of the switches including a phase changematerial; and forming phase change memory cells such that each of thephase change memory cells is located at respective cross point of thesecond cross points.
 12. The method of claim 11, wherein forming theswitches includes: forming a first electrode of each of the switchessuch that the first electrode contacts the first conductive line in thefirst group conductive lines.
 13. The method of claim 12, whereinforming the switches includes: forming a second electrode of each of theswitches such that the second electrode contacts a respective conductiveline of the second group of conductive lines.
 14. The method of claim13, wherein forming the switches includes: forming the phase changematerial of a respective switch such that the phase change materialcontacts the first electrode of the respective switch and the secondelectrode of the respective switch.
 15. The method of claim 14, whereinforming the switches includes: forming an additional phase changematerial contacting the second electrode; and forming a third electrodebetween the phase change material and the additional phase changematerials.
 16. The method of claim 11, wherein forming phase changememory cells includes: forming a first electrode of each of the phasechange memory cells such that the first electrode contacts a respectiveconductive line of the second conductive lines in the first group ofconductive lines.
 17. The method of claim 16, wherein forming the phasechange memory cells includes: forming a second electrode of each of thephase change memory cells such that the second electrode contacts arespective conductive line of the second group of conductive lines. 18.The method of claim 17, wherein forming the phase change memory cellsincludes forming a first phase change material contacting the firstelectrode.
 19. The method of claim 18, wherein forming the phase changememory cells includes: forming a second phase change material contactingthe second electrode; and forming a third electrode between the firstand second phase change materials.
 20. The method of claim 19, whereinforming the phase change memory cells includes forming a fourthelectrode between the second phase change material and the thirdelectrode.